STS MULTIPLEX ASE-HRM ICP ETCHER

1、设备名称：STS MULTIPLEX ASE-HRM ICP ETCHER

2、设备品牌：英国STS

3、设备用途：耦合离子刻蚀、深硅刻蚀

4、设备应用领域：半导体、MEMS、光电集成、LED、薄膜电池

5、设备英文介绍：

STS MULTIPLEX ASE-HRM ICP ETCHER consisting of:

Configuration:

- Model: Multiplex ICP

- Process Chamber: ASE-HRM

- ASE-HRM chamber: High Rate Magnetic source achieves over three times the etch rates versus the original Bosch process

- Process: deep silicon etch

- Bosch License

- Operating sofware: Windows 2000 Professional

- Currently set to process: 150mm

- Max wafer size capable: 200mm

- Year of Manufacture: October 2002

- Serial Number: 41543

Vacuum Load-lock For Single Chamber Multiplex systems (MESC):

- MACS loader (cassette to cassette loader)

- Carousel Load Lock (150mm)

- Chamber lid temperature control

- Fully automatic transfer of substrates between the load-lock and the process chamber

- Loader may be configured for substrates up to 200mm in diameter (currently set for 150mm)

Multiplex ICP Process Chamber:

- Production proven single wafer process chamber (aluminium)

- Balun Coil for High Rate Etch

- Turbo Pump

- VAT Pendulum Vent Valve

- Backside Helium Cooling (HBC2 module)

- Electro-Static Chuck (ESC)

- 13.5" ID Ceramic Chamber

- Two chamber view ports

- Remote sealed extracted gas box with orbitally welded gas lines

- Electronics cabinet

- Pentium based process module control computer

- LCD flat panel monitor

- Fully automatic multistep processing or manual operation

- Advanced Energy LF-5 RF Generator (500W)

- ENI ACG-3B RF Power Supply (13.56 MHz)

- Advanced Energy 3001 3kW RF Power Supply (Coil)

- TTi TGP110 10Mhz Pusle Generator

- Delta Electromagnetic Power Supply

- Milipore FC-2901 MFCs

Gas Box with gas configuration as follows:

- Ar - 50 sccm

- O2 - 100 sccm

- C4F8 - 600 sccm

- SF6 - 400 sccm

- N2 - vent

- Edwards iQDP80 Dry Pump

- Edwards iH600 Dry Pump

- Affinity PWG-060K Chiller

- Affinity RAA-005T Chiller

- System Cables (full set)

- System Power: 208V, 60Hz, 3PH

- Operations Manuals, Electrical Drawings and Documentation (Complete Manual Set)

- Refurbished to meet original STS specifications by ex-STS factory trained technicians

6、设备中文介绍：

窗体顶端

型号规格：ICP ASE
生产制造厂商：英国STS公司 

适用于4英寸硅片；

标准 ICP 深硅刻蚀工艺参数 :

20 微米深硅刻蚀

约 2.5 微米刻蚀窗口宽度

厚度大于 1 微米光刻胶掩膜或大约 0.5 微米 SiO2 掩膜

掩膜图形的硅暴露面积小于10%

刻蚀速度：>2 微米/分钟

光刻胶的选择比：>50:1

SiO2 的选择比：>100:1

边壁角度：90± 1 度

边壁粗糙度 (scallops)：<200 纳米 (峰与峰之间)

掩膜开始底部切口：每边小于 0.4 微米

均匀性 (芯片上)： <±5%

均匀性 (芯片与芯片之间)：<±5%

气体SF6 ，C4F8 ，Ar ，O2。

400 微米深硅刻蚀

大于80微米刻蚀窗口宽度

厚度大于10微米光刻胶掩膜或大于3.5微米SiO2掩膜

掩膜图形的硅暴露面积小于10%

刻蚀速度：>2微米/分钟

光刻胶的选择比：> 50:1

SiO2 的选择比：>100:1

边壁角度： 92+/-2 deg.

边壁粗糙度（scallops）：<400纳米（峰与峰之间）

掩膜开始底部切口：每边小于 1.5 微米

均匀性 (芯片上) : <±5%