P沟道场效应管 MEM2301XG
更新时间:2014-07-17 14:24:17 信息编号:2484978 发布者IP:58.250.241.235 浏览:73次![](http://image.11467.com/9/11/10344683620.jpg)
- 供应商
- 深圳市飙发科技有限公司 商铺
- 认证
- 资质核验:已通过营业执照认证入驻顺企:第12年主体名称:深圳市飙发科技有限公司组织机构代码:440301104540120
- 报价
- 请来电询价
- 所在地
- 深圳市福田区华富街道振华西路3号富荔花园2栋2单元504
- 联系电话
- 86-075583208119
- 手机号
- 13138895962
- 经理
- 凡静 请说明来自顺企网,优惠更多
产品详细介绍
general
description
mem2301xg series p-channel enhancement
modefield-effect transistor ,produced with high cell density dmos
trench technology, which is especially used to minimize on-state
resistance. this device particularly suits low voltage
applications, and low power dissipation,and low power dissipation
in a very small outline surface mount package.
features
-20v/-2.8a
rds(on) =93mω@ vgs=-4.5v,id=-2.8a
rds(on) =113mω@ vgs=-2.5v,id=-2a
high density cell design for ultra low on-resistance
subminiature surface mount package:sot23
typical
application
power management
load switch
battery protection