品牌	HJSX	型号	50N06
种类	绝缘栅(MOSFET)	沟道类型	N沟道
导电方式	增强型	用途	TR/激励、驱动
封装外形	WAFER/裸芯片	材料	N-FET硅N沟道
开启电压	=（V）	夹断电压	=（V）
跨导	=（μS）	极间电容	=（pF）
低频噪声系数	=（dB）	最大漏极电流	=（mA）
最大耗散功率	=（mW）

50 amps，60volts
n-channel mosfet
■ description
the 50n06 is a n-channel enhancement mosfet and is designed to have
better characteristics, such as superior switching performance, and withstand
high energy pulse in the avalanche and commutation mode. these devices are
well suited for low voltage applications such as automotive dc/dc converters,
and high efficiency switching for power management in portable and battery
operated products.
■ features
? rds(on)=0.023ω@vgs=10v
? low gate charge(typical 31nc)
? low reverse transfer capacitance(crss=typical 80pf)
? fast switching capability
? avalanche energy specified
? improved dv/dt capability,high ruggedness

absolute maximum ratings(tc=25℃,unless otherwise specified)
parameter symbol ratings units
drain-source voltage vdss 60 v
gate-source voltage vgss ±20 v
tc=25℃ 50 a
drain currenet continuous
tc=100℃
id
35 a
drain current pulsed (note 1) idp 200 a
repetitive (note 1) ear 13 mj
avalanche energy
single pulse(note 2) eas 480 mj
peak diode recovery dv/dt(note 3) dv/dt 7.0 v/ns
tc=25℃ 120 w
total power dissipation
derate above 25℃
pd
0.8 w/℃
operation junction temperature tj -55 to+150 ℃
storage temperature tstg -55~+150 ℃