| 产品名称 | P沟道场效应管 MEM2307XG |
|---|---|
| 公司名称 | 深圳市飙发科技有限公司 |
| 价格 | 面议 |
| 规格参数 | |
| 公司地址 | 深圳市福田区华富街道振华西路3号富荔花园2栋2单元504 |
| 联系电话 | 86-075583208119 13138895962 |
general description
mem2307xg series p-channel enhancement mode field-effect transistor ,produced with high cell density dmos trench technology, which is especially used to minimize on-state resistance. this device particularly suits low voltage applications, and low power dissipation, and low power dissipation in a very small outline surface mount package.
features
-30v/-4.1a
rds(on)＜88mù@ vgs=-10v,id=-4.1a
rds(on)＜108mù@ vgs=-4.5v,id=-3a
high density cell design for ultra low on-resistance
subminiature surface mount package: sot23
typical application
power management
load switch
battery protection