Parameter |
Symbol |
Rating |
Unit |
Drain-Source Voltage |
VDS |
-30 |
V |
Gate-Source Voltage |
VGS |
±12 |
|
Drain Current Continuous |
ID |
-4.2 |
A |
Drain Current Pulsed (Note 1) |
IDM |
-30 |
|
Maximun Power Dissipation |
PD |
1.2 |
W |
Operating Junction and Storage Temperature Range |
TJ ,TSTG |
-55 To 150 |
℃ |
Thermal Resistance ,Junction-to-Ambient(Note 2) |
RθJA |
104 |
℃/W |
A19T芯片MOS管参数: