IPB042N10N3英飞凌100V低压MOSFET;用于电源与电机驱动功率转换。效率提高30%;低压MOS常规应用还包含IRFS4127
200V mosfet D2pak;
IPB107N20N3 200V mosfet D2Pak;
IRFS4115 150V Mosfet D2pak;
IPB042N10N3 100V Mosfet D2pak;
The 100V OptiMOS™ family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
订购型号:IPB042N10N3GATMA1
Parametric | IPB042N10N3 G |
Budgetary Price €/1k | 0.84 |
Package | D2PAK (TO-263) |
VDS max | 100.0V |
RDS (on) max | 4.2mΩ |
Polarity | N |
ID max | 100.0A |
Ptot max | 214.0W |
IDpuls max | 400.0A |
VGS(th) min max | 2.0V 3.5V |
QG | 88.0nC |
Rth | 0.7K/W |