编号NO.
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项目Ltems
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单位Unit
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参数Specification
|
||
G652.D
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|||||
1
|
模场直径Mode Field Diameter
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1310nm
|
μm
|
8.6~9.5 ±0.4
|
|
1550nm
|
μm
|
10.4±0.8
|
|||
2
|
包层直径Cladding Diameter
|
μm
|
125.0±1.0
|
||
3
|
包层不圆度Cladding Non-Circularity
|
%
|
≤1.0
|
||
4
|
芯/包层同心度误差Core-Cladding Concentricity Error
|
μm
|
≤0.5
|
||
5
|
涂覆层直径Caating Diameter
|
μm
|
245±10
|
||
6
|
涂覆层不圆度Coating Non-Circularity
|
%
|
≤6.0
|
||
7
|
包层/涂覆层同心度误差Cladding-Coating Concentricity Error
|
μm
|
≤12.0
|
||
8
|
光缆截止波长Cable Cutoff Wavelength
|
nm
|
λcc≤1260
|
||
9
|
衰减系数Attenuation(max.)
|
1310nm
|
dB/km
|
≤0.36
|