MOS管YJ75N75封装TO-220

yj75n75c
general description： vdss 75 v
id 100 a
pd(tc=25℃) 230 w
rds(on)typ 10.2 mω
yj75n75c, the silicon n-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce
the conduction loss, improve switching performance and
enhance the avalanche energy. the transistor can be used in various power switching circuit for system miniaturization and higher efficiency. the package form is to-220ab, which accords with the rohs standard.
features：
􀁺 fast switching
􀁺 low on resistance(rdson≤11.5 mω)
􀁺 low gate charge (typical data:71nc)
􀁺 low reverse transfer capacitances(typical:40pf)
􀁺 single pulse avalanche energy test
applications：
automotive、dc motor control and class d amplifier.
absolute（tc= 25℃ unless otherwise specified）：
symbol parameter rating units
vdss drain-to-source voltage 75 v
continuous drain current 100 a
id
continuous drain current tc = 100 °c 71 a
idm
a1 pulsed drain current 400 a
vgs gate-to-source voltage ±20 v
eas
a2 single pulse avalanche energy 1100 mj
ear
a1 avalanche energy ,repetitive 100 mj
iar
a1 avalanche current 4.5 a
dv/dt a3 peak diode recovery dv/dt 5.0 v/ns
power dissipation 230 w
pd
derating factor above 25°c 1.53 w/℃
tj，tstg operating junction and storage temperature range 175，–55 to 175 ℃
tl maximumtemperature for soldering 300 ℃
s h enzhen yangjing micro-electronics co.,ltd.
to-220 ab plastic-encapsulate mosfets
深圳市扬晶微电子有限公司是一家二、三极管，高低压mos管生产厂商。

主推mos型号有：

1n60, 2n60, 4n60,5n60,7n60,8n60,10n60,12n60,75n75

si2300, si2301, si2302,ao3400,ao3401, ao3402,ao3407

9926,9435,4435,4953,8205,dw01等众多型号。全新yj原装，

质量稳定，单价优势，欢迎来电订购。