MOSFET 50N06
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- 天津瀚金盛芯科技有限公司 商铺
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- 报价
- 请来电询价
- 品牌
- HJSX
- 型号
- 50N06
- 种类
- 绝缘栅(MOSFET)
- 所在地
- 南开区城厢中路与北城街交口西北侧尚佳新苑5-1-707
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- 23673948
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- 13821869810
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产品详细介绍
品牌 | HJSX | 型号 | 50N06 |
种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
导电方式 | 增强型 | 用途 | TR/激励、驱动 |
封装外形 | WAFER/裸芯片 | 材料 | N-FET硅N沟道 |
开启电压 | =(V) | 夹断电压 | =(V) |
跨导 | =(μS) | 极间电容 | =(pF) |
低频噪声系数 | =(dB) | Zui大漏极电流 | =(mA) |
Zui大耗散功率 | =(mW) |
50 amps,60volts
n-channel mosfet
■ description
the 50n06 is a n-channel enhancement mosfet and is designed to
have
better characteristics, such as superior switching performance, and
withstand
high energy pulse in the avalanche and commutation mode. these
devices are
well suited for low voltage applications such as automotive dc/dc
converters,
and high efficiency switching for power management in portable and
battery
operated products.
■ features
? rds(on)=0.023ω@vgs=10v
? low gate charge(typical 31nc)
? low reverse transfer capacitance(crss=typical 80pf)
? fast switching capability
? avalanche energy specified
? improved dv/dt capability,high ruggedness
absolute maximum ratings(tc=25℃,unless otherwise specified)
parameter symbol ratings units
drain-source voltage vdss 60 v
gate-source voltage vgss ±20 v
tc=25℃ 50 a
drain currenet continuous
tc=100℃
id
35 a
drain current pulsed (note 1) idp 200 a
repetitive (note 1) ear 13 mj
avalanche energy
single pulse(note 2) eas 480 mj
peak diode recovery dv/dt(note 3) dv/dt 7.0 v/ns
tc=25℃ 120 w
total power dissipation
derate above 25℃
pd
0.8 w/℃
operation junction temperature tj -55 to+150 ℃
storage temperature tstg -55~+150 ℃
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