MOSFET 730 HJSX

730(c) power mosfet
1
6 amps，400volts
n-channel mosfet
■ description
the 730(c) n-channel enhancement mode silicon gate power
mosfet is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ features
? rds(on)=1.00ω@vgs= 10 v
? low gate charge ( typical 18nc)
? fast switching capability
? avalanche energy specified
? improved dv/dt capability

■ absolute maximum ratings(tc=25℃,unless otherwise specified)
ratings
parameter symbol
to-220 to-220f
units
drain-source voltage vdss 400 v
gate-source voltage vgss ±30 v
tc=25℃ 6.0 6.0＊ a
drain currenet continuous
tc=100℃
id
3.6 3.6＊ a
drain current pulsed (note 1) idp 24 24＊ a
repetitive (note 1) ear 7.3 mj
avalanche energy
single pulse (note 2) eas 270 mj
peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns
tc=25℃ 73 38 w
total power dissipation
derate above 25℃
pd
0.58 0.30 w/℃
junction temperature tj +150 ℃
storage temperature tstg -55~+150 ℃