HS25N06DA N沟道60V,MOSFET
更新时间:2017-06-12 14:25:04 信息编号:5179137 发布者IP:116.30.217.213 浏览:301次- 供应商
- 深圳市硕实科技有限公司 商铺
- 认证
- 资质核验:已通过营业执照认证入驻顺企:第18年主体名称:深圳市硕实科技有限公司组织机构代码:914403007827917077
- 报价
- 请来电询价
- HS
- HOMSEM
- HS25N06
- HS25N06DA
- 中国
- 中国
- 关键词
- HS25N06DA N沟道60V,MOSFET
- 所在地
- 中国 广东 深圳市 深圳市福田区华富路南光大厦311室
- 联系电话
- 86 0755 83040406
- 手机号
- 13662622177
- 销售
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产品详细介绍
深圳市硕实科技有限公司供应原装HOMSEMI MOSFET HS25N06DA TO252封装如有需要可致电联系0755-83040406
Description
The HS25N06DA is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell
density, DMOS trench technology.This high density process is
especially tailored to minimize on-state resistance.These
devices are particularly suited for low voltage application.
Features
VDS 60V
RDS(on)Max. 35mΩ
ID 25A
●High density cell design for ultra low
RDS(on)
● Excellent package for good heat
Pin configuration dissipation
Order Number Package
HS25N06DA TO-252
Maximum Ratings (Tc = 25℃ unless otherwise noted*)
Parameter Symbol Ratings Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current Tc=25℃ ID 25* A
Tc=100℃ 14* A
Pulsed Drain Current IDM 60 A
Power Dissipation Tc=25℃ PD 45 W
Derate above 25℃ 0.3
Single pulse avalanche energy(note 1) EAS 72
Operating Junction and Storage Temperature Range TJ,Tstg -55~+175
℃
* Dran current limited by maximum junction temperature.
1:EAS condition:L=0.5mH, VDD=30V, RG=25Ω,TJ=25℃.
Thermal Characteristics
Parameter Symbol Ratings Units
Thermal resistance, case to sink typ. RthCS 0.5 ℃/W
Thermal resistance junction to case. RthJC 3.3 ℃/W
Thermal resistance junction to ambient. RthJA 110 ℃/W
3 TO-252
- HS50N06DA 50A60V MOSFETHS:HOMSEMI
- N沟道MOSFET:HS60N03DAHS:HOMSEMI
- N沟道20A30V MOSFET:HS20N03HS:HOMSEMI
- EUP3468A1.00元/
德信:输入电压范围:8V至36V - IW636快充IC1.00元/
IWatt:宽工作电压范围从3V至16V